{"title":"薄膜BESOI的应力补偿高选择性蚀刻停止","authors":"C. Hunt, G. Rouse, C. Harendt, M. Green","doi":"10.1109/SOSSOI.1990.145753","DOIUrl":null,"url":null,"abstract":"A limiting issue in the application of the BESOI (bond and etchback silicon-on-insulator) technique to whole wafers is the final film thickness nonuniformity, which typically totals approximately 40 nm using the etchback techniques presented to date. Such variation makes BESOI impractical for thin-film SOI (e.g. <or=300 nm) and applications to fully depleted MOS. The etchback process is a major contributor to the final film thickness nonuniformity. The authors demonstrate a highly selective etch stop of 2*10/sup 20/ cm/sup -3/ boron concentration, stress compensated by introducing GE (a high atomic number species). The Si/sub 1-x-y/ Ge/sub x/B/sub gamma / etch stop is selective through the reduction of the passivation potential in KOH to a point where negligible etching occurs. The stress compensation gives the wafer surface an exact Si lattice constant. Epitaxial layers are grown over this etch stop without misfit dislocations.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Highly selective etch stop by stress compensation for thin-film BESOI\",\"authors\":\"C. Hunt, G. Rouse, C. Harendt, M. Green\",\"doi\":\"10.1109/SOSSOI.1990.145753\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A limiting issue in the application of the BESOI (bond and etchback silicon-on-insulator) technique to whole wafers is the final film thickness nonuniformity, which typically totals approximately 40 nm using the etchback techniques presented to date. Such variation makes BESOI impractical for thin-film SOI (e.g. <or=300 nm) and applications to fully depleted MOS. The etchback process is a major contributor to the final film thickness nonuniformity. The authors demonstrate a highly selective etch stop of 2*10/sup 20/ cm/sup -3/ boron concentration, stress compensated by introducing GE (a high atomic number species). The Si/sub 1-x-y/ Ge/sub x/B/sub gamma / etch stop is selective through the reduction of the passivation potential in KOH to a point where negligible etching occurs. The stress compensation gives the wafer surface an exact Si lattice constant. Epitaxial layers are grown over this etch stop without misfit dislocations.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145753\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145753","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly selective etch stop by stress compensation for thin-film BESOI
A limiting issue in the application of the BESOI (bond and etchback silicon-on-insulator) technique to whole wafers is the final film thickness nonuniformity, which typically totals approximately 40 nm using the etchback techniques presented to date. Such variation makes BESOI impractical for thin-film SOI (e.g. >
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