P. Bigenwald, B. Gil, L. Konczewicz, P. Testud, R. Aulombard
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Excitons in III-V strained marginal systems: dispersion relations and absorption processes
The authors have investigated theoretically the optical properties of strained (001) GaAs-(Ga,In)As simple quantum wells with a high Indium content ({approximately}35%). Due to the band offset, the e{sub 1}lh{sub 1} transition is marginally type I for x > 25% and type II otherwise. They calculate the exciton parameters within a model that includes the attractive potential created by the condensed electron wavefunction on the marginal light hole one. The influence of the electric field on the valence wavefunctions away from k = 0 is also studied.
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