用于低功耗BiCMOS应用的薄膜SOI衬底上的低热预算，完全自对准横向BJT

1995 Symposium on VLSI Technology. Digest of Technical Papers Pub Date : 1995-06-06 DOI:10.1109/VLSIT.1995.520893

V. Chen, J. Woo

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引用次数: 5

摘要

在TFSOI衬底上制备了一种新型的SDE LBJT。制造工艺是自对准的，具有最小的热预算，并且与SOI CMOS工艺完全兼容。获得了良好的电学效果。该器件有望在低功耗应用中具有良好的电流驱动和高频性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A low thermal budget, fully self-aligned lateral BJT on thin film SOI substrate for low power BiCMOS applications

A novel SDE LBJT on TFSOI substrate has been demonstrated. The fabrication process is self-aligned, with a minimum thermal budget, and is fully compatible with an SOI CMOS process. Good electrical results were obtained. The devices are expected to have good current drive and high frequency performance for low power applications.

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1995 Symposium on VLSI Technology. Digest of Technical Papers

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