一个40nm-CMOS, 18 μW,温度和电源电压无关的RFID标签传感器接口

Valentijn De Smedt, G. Gielen, W. Dehaene
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引用次数: 11

摘要

本文介绍了一种用于rfid和低功耗应用的完全集成的基于振荡器的传感器接口。该电路在40纳米CMOS技术中进行处理和测试。该接口将来自差分传感器的模拟传感器信号转换为占空比与传感器值成比例的脉宽调制(PWM)信号。由于所用振荡器的控制线性度高,因此接口具有较低的非线性,并且可以制作成与温度和电源电压高度无关的接口。1.0 V时的总功耗为18 μW,工作电压范围为0.8 V ~ 1.5 V,工作温度范围为-20℃~ 100℃。电压依赖性低于1.42% /V,最大温度依赖性为79 ppm/°C。在所有情况下,振荡器频率略高于2mhz。测量到的SNDR为47.4 dB, FOM为66 fJ/b-conv。
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A 40nm-CMOS, 18 μW, temperature and supply voltage independent sensor interface for RFID tags
A fully-integrated, oscillator-based sensor interface for RFIDs and low-power applications is presented in this article. The circuit is processed and tested in a 40 nm CMOS technology. The interface translates the analog sensor signal, coming from a differential sensor, into a Pulse width Modulated (PWM) signal of which the duty cycle is proportional to the sensor value. Due to the high control linearity of the used oscillator, the interface has a low nonlinearity and can be made highly temperature and supply voltage independent. The total power consumption is 18 μW at 1.0 V and the interface works over a 0.8 to 1.5 V supply voltage range and a -20 to 100°C temperature range. The voltage dependency is below 1.42 %/V and the maximum temperature dependency is 79 ppm/°C. The oscillator frequency is slightly above 2 MHz in all circumstances. The measured SNDR of 47.4 dB results in a FOM of 66 fJ/b-conv.
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