{"title":"分子束外延GaAs/Al/sub 0.2/Ga/sub 0.8/As异质结双极晶体管","authors":"W. Li, P. Bhattacharya","doi":"10.1109/DRC.1991.664722","DOIUrl":null,"url":null,"abstract":"Summary form only given. The authors have investigated the characteristics and reliability of p-doping in GaAs with Si by MBE and have realized high-gain n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) on","PeriodicalId":269691,"journal":{"name":"[1991] 49th Annual Device Research Conference Digest","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Molecular Beam Epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As Heterojunction Bipolar Transistor on\",\"authors\":\"W. Li, P. Bhattacharya\",\"doi\":\"10.1109/DRC.1991.664722\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. The authors have investigated the characteristics and reliability of p-doping in GaAs with Si by MBE and have realized high-gain n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) on\",\"PeriodicalId\":269691,\"journal\":{\"name\":\"[1991] 49th Annual Device Research Conference Digest\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"[1991] 49th Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1991.664722\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"[1991] 49th Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1991.664722","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Molecular Beam Epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As Heterojunction Bipolar Transistor on
Summary form only given. The authors have investigated the characteristics and reliability of p-doping in GaAs with Si by MBE and have realized high-gain n-p-n GaAs/AlGaAs heterojunction bipolar transistors (HBTs) on
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