Xilinx 16nm FinFET Zynq®UltraScale+™MPSoC的中子、64 MeV质子和α单事件表征

2017 IEEE Radiation Effects Data Workshop (REDW) Pub Date : 2017-07-01 DOI:10.1109/NSREC.2017.8115449

P. Maillard, M. Hart, Jeff Barton, Jue Arver, Christina Smith

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引用次数: 12

摘要

本文研究了Xilinx 16nm FinFET XCZU9EG Zynq®MPSoC在中子、64mev质子和热中子源辐照下的单事件效应响应。此外，还构建了一个16nm类fpga测试芯片，用于alpha箔测试。为可编程逻辑提供了配置RAM (CRAM)单元和块RAM (bRAM)单元的单事件干扰结果。此外，还介绍了首个Xilinx 16nm FinFET处理器(PS)的SEE结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Neutron, 64 MeV proton & alpha single-event characterization of Xilinx 16nm FinFET Zynq® UltraScale+™ MPSoC

This paper examines the single-event effect response of the Xilinx 16nm FinFET XCZU9EG Zynq® MPSoC irradiated with neutrons, 64 MeV protons and thermal neutrons sources. A 16nm FPGA-like test chip was also built for alpha foil testing. Results for single-event upsets on configuration RAM (CRAM) cells and block RAM (bRAM) cells are provided for the programmable logic. In addition, the 1st· Xilinx 16nm FinFET processor (PS) SEE results are also presented.

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2017 IEEE Radiation Effects Data Workshop (REDW)

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