一种采用45纳米CMOS SOI的可调副本的高带宽电源抑制的小面积稳压器

2008 IEEE Asian Solid-State Circuits Conference Pub Date : 2008-12-12 DOI:10.1109/ASSCC.2008.4708752

T. Toifl, C. Menolfi, P. Buchmann, M. Kossel, T. Morf, M. Schmatz

{"title":"一种采用45纳米CMOS SOI的可调副本的高带宽电源抑制的小面积稳压器","authors":"T. Toifl, C. Menolfi, P. Buchmann, M. Kossel, T. Morf, M. Schmatz","doi":"10.1109/ASSCC.2008.4708752","DOIUrl":null,"url":null,"abstract":"We present a low dropout voltage regulator which uses a regulated replica in the loop in order to achieve small area, excellent power supply rejection over a wide frequency range, and high loop stability. The regulated replica provides accurate matching of the gm/gds ratio in the current source transistors for the replica and the load path. Power supply rejection of >22 dB was measured up to 1 GHz for a circuit operating at 0.8 V from a 1.0 V supply.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A small-area voltage regulator with high-bandwidth supply-rejection using a regulated replica in 45nm CMOS SOI\",\"authors\":\"T. Toifl, C. Menolfi, P. Buchmann, M. Kossel, T. Morf, M. Schmatz\",\"doi\":\"10.1109/ASSCC.2008.4708752\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a low dropout voltage regulator which uses a regulated replica in the loop in order to achieve small area, excellent power supply rejection over a wide frequency range, and high loop stability. The regulated replica provides accurate matching of the gm/gds ratio in the current source transistors for the replica and the load path. Power supply rejection of >22 dB was measured up to 1 GHz for a circuit operating at 0.8 V from a 1.0 V supply.\",\"PeriodicalId\":143173,\"journal\":{\"name\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2008.4708752\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708752","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

我们提出了一种低差电压调节器，它在环路中使用一个可调节的副本，以实现小面积、宽频率范围内优异的电源抑制和高环路稳定性。调节副本提供精确匹配的gm/gds比在电流源晶体管的副本和负载路径。在1.0 V电源的0.8 V电压下，在1ghz范围内测量到>22 dB的电源抑制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

A small-area voltage regulator with high-bandwidth supply-rejection using a regulated replica in 45nm CMOS SOI

We present a low dropout voltage regulator which uses a regulated replica in the loop in order to achieve small area, excellent power supply rejection over a wide frequency range, and high loop stability. The regulated replica provides accurate matching of the gm/gds ratio in the current source transistors for the replica and the load path. Power supply rejection of >22 dB was measured up to 1 GHz for a circuit operating at 0.8 V from a 1.0 V supply.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 IEEE Asian Solid-State Circuits Conference

自引率

0.00%

发文量