l形隧道场效应晶体管的设计改进

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404373

Sang Wan Kim, W. Choi, Min-Chul Sun, H. Kim, Byung-Gook Park

{"title":"l形隧道场效应晶体管的设计改进","authors":"Sang Wan Kim, W. Choi, Min-Chul Sun, H. Kim, Byung-Gook Park","doi":"10.1109/SOI.2012.6404373","DOIUrl":null,"url":null,"abstract":"L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shaped TFETs show higher on-current (Ion) and lower subthreshold swing (SS) than conventional L-shaped TFETs.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Design improvement of L-shaped tunneling field-effect transistors\",\"authors\":\"Sang Wan Kim, W. Choi, Min-Chul Sun, H. Kim, Byung-Gook Park\",\"doi\":\"10.1109/SOI.2012.6404373\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shaped TFETs show higher on-current (Ion) and lower subthreshold swing (SS) than conventional L-shaped TFETs.\",\"PeriodicalId\":306839,\"journal\":{\"name\":\"2012 IEEE International SOI Conference (SOI)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2012.6404373\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

l型隧道场效应晶体管(tfet)具有高电流驱动性和突发性通断转换的特点。为了进一步改进l型tfet，本研究将隧道区掺杂为n型。优化了隧道区掺杂浓度。与传统的l型tfet相比，所提出的新型l型tfet具有更高的导通电流(Ion)和更低的亚阈值摆幅(SS)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Design improvement of L-shaped tunneling field-effect transistors

L-shaped tunneling field-effect transistors (TFETs) feature high current drivability and abrupt on-off transition. For further improvement of L-shaped TFETs, tunneling regions become n-type doped in this study. The doping concentration of the tunneling regions is optimized. The proposed novel L-shaped TFETs show higher on-current (Ion) and lower subthreshold swing (SS) than conventional L-shaped TFETs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE International SOI Conference (SOI)

自引率

0.00%

发文量

期刊最新文献

BSIM-IMG: A Turnkey compact model for fully depleted technologies SOI tri-gate nanowire MOSFETs for ultra-low power LSI Key enabling processes for more-than-moore technologies High voltage SOI MESFETs at the 45nm technology node Cryogenic operation of double-gate FinFET and demonstration of analog circuit at 4.2K