{"title":"超导MCM高速互连的激光熔化/喷射和分布In-Sn碰撞设计与制造","authors":"Gaowei Xu, W. Gai, L. Luo, Jie Ren","doi":"10.1109/ISEC46533.2019.8990936","DOIUrl":null,"url":null,"abstract":"In this paper, we reported a laser melting/jetting bumping technology for flip-chip interconnection, which will provide a flexible interconnection solution for high-speed superconducting MCM (Multi-chip modules). We adopted In-Sn eutectic alloy (with low-melt-point about 117°C) to fabricate flip-chip bump array of SCE-MCM. The effects of the key process parameters (such as laser energy, nitrogen pressure etc.) on interconnection strength were also discussed.","PeriodicalId":250606,"journal":{"name":"2019 IEEE International Superconductive Electronics Conference (ISEC)","volume":"190 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-Sn Bumping Design and Fabrication for High Speed Interconnects of Superconducting MCM via Laser Melting/Jetting and Distribution\",\"authors\":\"Gaowei Xu, W. Gai, L. Luo, Jie Ren\",\"doi\":\"10.1109/ISEC46533.2019.8990936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we reported a laser melting/jetting bumping technology for flip-chip interconnection, which will provide a flexible interconnection solution for high-speed superconducting MCM (Multi-chip modules). We adopted In-Sn eutectic alloy (with low-melt-point about 117°C) to fabricate flip-chip bump array of SCE-MCM. The effects of the key process parameters (such as laser energy, nitrogen pressure etc.) on interconnection strength were also discussed.\",\"PeriodicalId\":250606,\"journal\":{\"name\":\"2019 IEEE International Superconductive Electronics Conference (ISEC)\",\"volume\":\"190 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE International Superconductive Electronics Conference (ISEC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISEC46533.2019.8990936\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE International Superconductive Electronics Conference (ISEC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEC46533.2019.8990936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In-Sn Bumping Design and Fabrication for High Speed Interconnects of Superconducting MCM via Laser Melting/Jetting and Distribution
In this paper, we reported a laser melting/jetting bumping technology for flip-chip interconnection, which will provide a flexible interconnection solution for high-speed superconducting MCM (Multi-chip modules). We adopted In-Sn eutectic alloy (with low-melt-point about 117°C) to fabricate flip-chip bump array of SCE-MCM. The effects of the key process parameters (such as laser energy, nitrogen pressure etc.) on interconnection strength were also discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
