90nm CMOS无电阻紧凑型可调基准电压,适用于超低功耗低成本应用

A. Samir, E. Kussener, W. Rahajandraibe, L. Girardeau, Y. Bert, H. Barthélemy
{"title":"90nm CMOS无电阻紧凑型可调基准电压,适用于超低功耗低成本应用","authors":"A. Samir, E. Kussener, W. Rahajandraibe, L. Girardeau, Y. Bert, H. Barthélemy","doi":"10.1109/ICECS.2011.6122361","DOIUrl":null,"url":null,"abstract":"A low power voltage reference generator operating with a supply voltage ranging from 1.6V to 3.6V has been implemented in a 90-nm standard CMOS process. The reference is based on MOSFETs that are biased in the weak inversion region to consume nanowatts of power and uses no resistors. The maximum supply current at 3.6V and at 125°C is 173nA. It provides an 771mV voltage reference. A temperature coefficient of 7.5ppm/°C is achieved at best and 39.5ppm/°C on average, in a range from −40 to 125°C, as the combined effect of a suppression of the temperature dependence of mobility and the compensation of the threshold voltage temperature variation. The total block area is 0.03mm2.","PeriodicalId":251525,"journal":{"name":"2011 18th IEEE International Conference on Electronics, Circuits, and Systems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A 90-nm CMOS resistor-free compact trimmable voltage reference for ultra-low power low cost applications\",\"authors\":\"A. Samir, E. Kussener, W. Rahajandraibe, L. Girardeau, Y. Bert, H. Barthélemy\",\"doi\":\"10.1109/ICECS.2011.6122361\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low power voltage reference generator operating with a supply voltage ranging from 1.6V to 3.6V has been implemented in a 90-nm standard CMOS process. The reference is based on MOSFETs that are biased in the weak inversion region to consume nanowatts of power and uses no resistors. The maximum supply current at 3.6V and at 125°C is 173nA. It provides an 771mV voltage reference. A temperature coefficient of 7.5ppm/°C is achieved at best and 39.5ppm/°C on average, in a range from −40 to 125°C, as the combined effect of a suppression of the temperature dependence of mobility and the compensation of the threshold voltage temperature variation. The total block area is 0.03mm2.\",\"PeriodicalId\":251525,\"journal\":{\"name\":\"2011 18th IEEE International Conference on Electronics, Circuits, and Systems\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 18th IEEE International Conference on Electronics, Circuits, and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECS.2011.6122361\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 18th IEEE International Conference on Electronics, Circuits, and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECS.2011.6122361","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

在90纳米标准CMOS工艺中实现了一种低功率参考电压发生器,其工作电压范围为1.6V至3.6V。该参考是基于偏置在弱反转区域的mosfet,以消耗纳瓦功率,并且不使用电阻。在3.6V和125°C时的最大电源电流为173nA。它提供了一个771mV的参考电压。温度系数最高可达7.5ppm/°C,在- 40至125°C的范围内平均可达39.5ppm/°C,这是抑制迁移率的温度依赖性和补偿阈值电压温度变化的综合效应。总块面积为0.03mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 90-nm CMOS resistor-free compact trimmable voltage reference for ultra-low power low cost applications
A low power voltage reference generator operating with a supply voltage ranging from 1.6V to 3.6V has been implemented in a 90-nm standard CMOS process. The reference is based on MOSFETs that are biased in the weak inversion region to consume nanowatts of power and uses no resistors. The maximum supply current at 3.6V and at 125°C is 173nA. It provides an 771mV voltage reference. A temperature coefficient of 7.5ppm/°C is achieved at best and 39.5ppm/°C on average, in a range from −40 to 125°C, as the combined effect of a suppression of the temperature dependence of mobility and the compensation of the threshold voltage temperature variation. The total block area is 0.03mm2.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Controlling the bandwidth of Bulk Acoustic Wave filter using a decoder designed on 65nm process High level characterization and optimization of a GPSK modulator with genetic algorithm Asymmetric large size multiplication using embedded blocks with efficient compression technique in FPGAs Circuit authentication based on Ring-Oscillator PUFs High performance 4:1 multiplexer with ambipolar double-gate FETs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1