T. Merkle, S. Wagner, A. Tessmann, M. Kuri, H. Massler, A. Leuther
{"title":"集成220-260 GHz雷达前端","authors":"T. Merkle, S. Wagner, A. Tessmann, M. Kuri, H. Massler, A. Leuther","doi":"10.1109/BCICTS.2018.8550939","DOIUrl":null,"url":null,"abstract":"Subject of this paper is an integrated transceiver frontend MMIC that was designed for millimeter-wave wideband radar systems operating at a center frequency of 240 GHz. The MMIC was implemented using a 35 nm InAIAs/InGaAs based metamorphic HEMT technology. The key RF parameters of transmit power, receiver conversion gain and noise figure, are achieved over a 1-dB defined bandwidth of 40 GHz. The MMIC was also packaged and tested in a WR-3 waveguide module. Between 220 and 260 GHz, an output power of 6 dBm with a flatness of better than 1 dB was measured, as well as an average receiver noise figure of 7 dB and a conversion gain of 10 dB. The on-wafer measured output power of the transceiver MMIC reached 8 dBm applying an increased dc drain voltage. Several breakout circuits were manufactured for additional separate on-wafer characterization of sub-functions of the transceiver MMIC. For example, the power amplifier of the transmit path achieved a saturated output power of 10 dBm at 240 GHz while consuming a chip area of only $\\mathbf{500}\\ \\mathbf{x}\\ \\mathbf{225}\\ \\mu \\text{m}$.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Integrated 220–260 GHz Radar Frontend\",\"authors\":\"T. Merkle, S. Wagner, A. Tessmann, M. Kuri, H. Massler, A. Leuther\",\"doi\":\"10.1109/BCICTS.2018.8550939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Subject of this paper is an integrated transceiver frontend MMIC that was designed for millimeter-wave wideband radar systems operating at a center frequency of 240 GHz. The MMIC was implemented using a 35 nm InAIAs/InGaAs based metamorphic HEMT technology. The key RF parameters of transmit power, receiver conversion gain and noise figure, are achieved over a 1-dB defined bandwidth of 40 GHz. The MMIC was also packaged and tested in a WR-3 waveguide module. Between 220 and 260 GHz, an output power of 6 dBm with a flatness of better than 1 dB was measured, as well as an average receiver noise figure of 7 dB and a conversion gain of 10 dB. The on-wafer measured output power of the transceiver MMIC reached 8 dBm applying an increased dc drain voltage. Several breakout circuits were manufactured for additional separate on-wafer characterization of sub-functions of the transceiver MMIC. For example, the power amplifier of the transmit path achieved a saturated output power of 10 dBm at 240 GHz while consuming a chip area of only $\\\\mathbf{500}\\\\ \\\\mathbf{x}\\\\ \\\\mathbf{225}\\\\ \\\\mu \\\\text{m}$.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8550939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8550939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Subject of this paper is an integrated transceiver frontend MMIC that was designed for millimeter-wave wideband radar systems operating at a center frequency of 240 GHz. The MMIC was implemented using a 35 nm InAIAs/InGaAs based metamorphic HEMT technology. The key RF parameters of transmit power, receiver conversion gain and noise figure, are achieved over a 1-dB defined bandwidth of 40 GHz. The MMIC was also packaged and tested in a WR-3 waveguide module. Between 220 and 260 GHz, an output power of 6 dBm with a flatness of better than 1 dB was measured, as well as an average receiver noise figure of 7 dB and a conversion gain of 10 dB. The on-wafer measured output power of the transceiver MMIC reached 8 dBm applying an increased dc drain voltage. Several breakout circuits were manufactured for additional separate on-wafer characterization of sub-functions of the transceiver MMIC. For example, the power amplifier of the transmit path achieved a saturated output power of 10 dBm at 240 GHz while consuming a chip area of only $\mathbf{500}\ \mathbf{x}\ \mathbf{225}\ \mu \text{m}$.