逻辑应用SiGe纳米机电继电器的设计

V. Rochus, M. Ramezani, S. Cosemans, S. Severi, A. Witvrouw, K. De Meyer, H. Tilmans, X. Rottenberg
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引用次数: 4

摘要

本文提出了一种考虑卡西米尔力或范德华力的纳米机电结构(NEMS)继电器的静态和动态建模的设计方法。目标是使用多晶硅锗工艺设计这些结构,在间隙,结构厚度和关键尺寸上有几个制造限制。设计方法从考虑附着力一般表达式的分析研究开始。考虑到范德华力,在一个简单悬臂梁上进行了有限元模拟,证实了这些分析结果。然后设计更复杂的结构,例如具有更大板和扭转致动器的悬臂,以提高设备的性能并避免永久粘连。对逆变器和非与门进行了设计和优化,使其达到cmos等效规格,最后提出了一种基于新型逆变器和非与门的环形振荡器。
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Design of SiGe Nano-Electromechanical relays for logic applications
This paper presents a design approach for Nano-ElectroMechanical Structures (NEMS) relays taking Casimir or van der Waals forces into account for the static and dynamic modeling of the devices. The goal is to design these structures using the Poly Silicon Germanium process, with several fabrication constraints on the gap, the structure thickness and the critical dimensions. The design approach starts with an analytical study taking the general expression for adhesion forces into account. Considering the van der Waals forces, finite element simulations performed on a simple cantilever confirm these analytical results. More complex structures are then designed, such as cantilevers with larger plates and torsion actuators, in order to increase the performance of the devices and to avoid permanent stiction. Inverters as well as NAND gates are designed and optimized to reach CMOS-equivalent specifications and finally a ring oscillator based on the new inverter and NAND gate is proposed.
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