FeRAM器件用SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT)电容器的低损伤ecr等离子体刻蚀技术

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623736

Maejima, Saitoh, Hayashi

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摘要

采用ECR等离子体刻蚀法制备了SrBi2Ta20p (SBT)薄膜，研究了等离子体气体种类对薄膜铁电性能的影响。非还原性的C12/Ar气体代替还原性的BClJAr气体，显著抑制了蚀刻损伤，降低了退火温度以释放蚀刻后的损伤。成功地获得了残余极化为15&/cm2和低漏电流(< 1 f 1 cm2)的SBT电容器。

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Low-damage ECR-plasma-etching technique for SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) capacitor for FeRAM devices

SrBi2Ta20p (SBT) film is patterned by ECR plasma etching, and the effects of plasma gas species on the ferroelectric properties are investigated. A non-reductive C12/Ar gas, instead of a reductive BClJAr gas, suppresses the etching damage drastically, lowering the annealing temperature to release the damage after etching. A SBT capacitor with a remnant polarization of 15&/cm2 and a low leakage current ( < l f l c m 2 ) is successfully obtained.

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1997 Symposium on VLSI Technology

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