ISPSD 2022:第34届功率半导体器件与ICS国际研讨会

{"title":"ISPSD 2022:第34届功率半导体器件与ICS国际研讨会","authors":"","doi":"10.1109/ispsd57135.2023.10147522","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":344266,"journal":{"name":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Awards of ISPSD 2022: The 34th International Symposium on Power Semiconductor Devices and ICS\",\"authors\":\"\",\"doi\":\"10.1109/ispsd57135.2023.10147522\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":344266,\"journal\":{\"name\":\"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"volume\":\"150 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-05-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ispsd57135.2023.10147522\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ispsd57135.2023.10147522","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Awards of ISPSD 2022: The 34th International Symposium on Power Semiconductor Devices and ICS
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