3.5 ghz超紧凑型GaN e类集成Doherty MMIC PA,用于5G大规模mimo基站应用

S. Maroldt, M. Ercoli
{"title":"3.5 ghz超紧凑型GaN e类集成Doherty MMIC PA,用于5G大规模mimo基站应用","authors":"S. Maroldt, M. Ercoli","doi":"10.23919/EUMIC.2017.8230693","DOIUrl":null,"url":null,"abstract":"This paper presents a high gain ultra-compact Doherty PA design approach based on 28 V two-stage GaN MMICs. A 20 W asymmetric and 26 W symmetric Doherty amplifier operating in the 3.4–3.6 GHz band were designed into a small footprint 7×7 mm2 QFN plastic package for 5G massive MIMO base station applications. The use of package-integrated low-loss passive devices to realize the class-E like inverted Doherty combiner resulted in excellent final stage drain efficiencies of 60 % at 8 dB output power back-off and 65 % in saturation, to the best of the authors' knowledge the highest reported final stage drain efficiency for GaN MMIC based integrated Doherty PAs in the 3.5 GHz band. The full asymmetric PA board yields a measured line-up efficiency of 43 % with an associated gain of 26 dB at 35 dBm average power of a 20 MHz LTE signal, corresponding to 8 dB output power back-off.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"3.5-GHz ultra-compact GaN class-E integrated Doherty MMIC PA for 5G massive-MIMO base station applications\",\"authors\":\"S. Maroldt, M. Ercoli\",\"doi\":\"10.23919/EUMIC.2017.8230693\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a high gain ultra-compact Doherty PA design approach based on 28 V two-stage GaN MMICs. A 20 W asymmetric and 26 W symmetric Doherty amplifier operating in the 3.4–3.6 GHz band were designed into a small footprint 7×7 mm2 QFN plastic package for 5G massive MIMO base station applications. The use of package-integrated low-loss passive devices to realize the class-E like inverted Doherty combiner resulted in excellent final stage drain efficiencies of 60 % at 8 dB output power back-off and 65 % in saturation, to the best of the authors' knowledge the highest reported final stage drain efficiency for GaN MMIC based integrated Doherty PAs in the 3.5 GHz band. The full asymmetric PA board yields a measured line-up efficiency of 43 % with an associated gain of 26 dB at 35 dBm average power of a 20 MHz LTE signal, corresponding to 8 dB output power back-off.\",\"PeriodicalId\":120932,\"journal\":{\"name\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2017.8230693\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2017.8230693","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24

摘要

本文提出了一种基于28 V两级GaN mmic的高增益超紧凑Doherty放大器设计方法。设计了一款工作在3.4-3.6 GHz频段的20w非对称和26w对称Doherty放大器,采用占地面积7×7 mm2的QFN塑料封装,用于5G大规模MIMO基站应用。使用封装集成的低损耗无源器件来实现e类反向Doherty合成器,在8 dB输出功率回调时达到60%,在饱和时达到65%,据作者所知,这是3.5 GHz频段基于GaN MMIC的集成Doherty PAs的最高末级漏极效率。在20mhz LTE信号的平均功率为35 dBm时,全非对称PA板的测量线路效率为43%,相关增益为26 dB,对应于8 dB输出功率回退。
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3.5-GHz ultra-compact GaN class-E integrated Doherty MMIC PA for 5G massive-MIMO base station applications
This paper presents a high gain ultra-compact Doherty PA design approach based on 28 V two-stage GaN MMICs. A 20 W asymmetric and 26 W symmetric Doherty amplifier operating in the 3.4–3.6 GHz band were designed into a small footprint 7×7 mm2 QFN plastic package for 5G massive MIMO base station applications. The use of package-integrated low-loss passive devices to realize the class-E like inverted Doherty combiner resulted in excellent final stage drain efficiencies of 60 % at 8 dB output power back-off and 65 % in saturation, to the best of the authors' knowledge the highest reported final stage drain efficiency for GaN MMIC based integrated Doherty PAs in the 3.5 GHz band. The full asymmetric PA board yields a measured line-up efficiency of 43 % with an associated gain of 26 dB at 35 dBm average power of a 20 MHz LTE signal, corresponding to 8 dB output power back-off.
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