{"title":"一个2.4 GS/s的10位时间交错SAR ADC,具有旁路窗口和机会偏移校准","authors":"Q. Fan, Jinghong Chen","doi":"10.1109/ESSCIRC.2019.8902620","DOIUrl":null,"url":null,"abstract":"A power-efficient 2.4 GS/s 10-bit time-interleaved SAR ADC is presented. To reduce the power consumption, several conversion cycles are skipped as the input signal falls within a predefined bypass window. To enhance the operation speed, two alternate comparators are adopted in each ADC channel. The comparator offset is calibrated only when the bit bypass is triggered. This eliminates the need of a dedicated calibration cycle and the conversion rate degradation is avoided. The reference voltage of each ADC channel is provided by a pre-charged reservoir to avoid inter-channel crosstalk without introduction of power-hungry distributed reference buffers. Fabricated in a 28 nm FDSOI process, the proposed ADC achieves 49.02 dB SNDR and a Nyquist Walden FOM of 17.7 fJ/conv.-step at 2.4 GS/s.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A 2.4 GS/s 10-Bit Time-Interleaved SAR ADC with a Bypass Window and Opportunistic Offset Calibration\",\"authors\":\"Q. Fan, Jinghong Chen\",\"doi\":\"10.1109/ESSCIRC.2019.8902620\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A power-efficient 2.4 GS/s 10-bit time-interleaved SAR ADC is presented. To reduce the power consumption, several conversion cycles are skipped as the input signal falls within a predefined bypass window. To enhance the operation speed, two alternate comparators are adopted in each ADC channel. The comparator offset is calibrated only when the bit bypass is triggered. This eliminates the need of a dedicated calibration cycle and the conversion rate degradation is avoided. The reference voltage of each ADC channel is provided by a pre-charged reservoir to avoid inter-channel crosstalk without introduction of power-hungry distributed reference buffers. Fabricated in a 28 nm FDSOI process, the proposed ADC achieves 49.02 dB SNDR and a Nyquist Walden FOM of 17.7 fJ/conv.-step at 2.4 GS/s.\",\"PeriodicalId\":402948,\"journal\":{\"name\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2019.8902620\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.4 GS/s 10-Bit Time-Interleaved SAR ADC with a Bypass Window and Opportunistic Offset Calibration
A power-efficient 2.4 GS/s 10-bit time-interleaved SAR ADC is presented. To reduce the power consumption, several conversion cycles are skipped as the input signal falls within a predefined bypass window. To enhance the operation speed, two alternate comparators are adopted in each ADC channel. The comparator offset is calibrated only when the bit bypass is triggered. This eliminates the need of a dedicated calibration cycle and the conversion rate degradation is avoided. The reference voltage of each ADC channel is provided by a pre-charged reservoir to avoid inter-channel crosstalk without introduction of power-hungry distributed reference buffers. Fabricated in a 28 nm FDSOI process, the proposed ADC achieves 49.02 dB SNDR and a Nyquist Walden FOM of 17.7 fJ/conv.-step at 2.4 GS/s.