{"title":"Si中掺杂物高通道MeV植入物的研究(100)","authors":"M. Current, G. Hobler, Yoji Kawasaki","doi":"10.23919/IWJT.2019.8802900","DOIUrl":null,"url":null,"abstract":"This tutorial reviews key issues for use of highly-channeled profiles with MeV energy dopants in Si. Practical issues for systems and process, including beam-wafer alignment, beam divergence and wafer temperature, are discussed as well as the use of Monte-Carlo modeling to guide process development. Recent photo- and cathodo-luminescence results on the effects of elevated wafer implant temperatures on residual defects after annealing in channeled MeV dopant implants are outlined.","PeriodicalId":441279,"journal":{"name":"2019 19th International Workshop on Junction Technology (IWJT)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Aspects of Highly-channeled MeV Implants of Dopants in Si(100)\",\"authors\":\"M. Current, G. Hobler, Yoji Kawasaki\",\"doi\":\"10.23919/IWJT.2019.8802900\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This tutorial reviews key issues for use of highly-channeled profiles with MeV energy dopants in Si. Practical issues for systems and process, including beam-wafer alignment, beam divergence and wafer temperature, are discussed as well as the use of Monte-Carlo modeling to guide process development. Recent photo- and cathodo-luminescence results on the effects of elevated wafer implant temperatures on residual defects after annealing in channeled MeV dopant implants are outlined.\",\"PeriodicalId\":441279,\"journal\":{\"name\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 19th International Workshop on Junction Technology (IWJT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/IWJT.2019.8802900\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 19th International Workshop on Junction Technology (IWJT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/IWJT.2019.8802900","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Aspects of Highly-channeled MeV Implants of Dopants in Si(100)
This tutorial reviews key issues for use of highly-channeled profiles with MeV energy dopants in Si. Practical issues for systems and process, including beam-wafer alignment, beam divergence and wafer temperature, are discussed as well as the use of Monte-Carlo modeling to guide process development. Recent photo- and cathodo-luminescence results on the effects of elevated wafer implant temperatures on residual defects after annealing in channeled MeV dopant implants are outlined.
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