Thermal resistance reduction in power MOSFETs integrated in a 65nm SOI technology

The static and dynamic analysis of the thermal resistance (RTH) in 65 nm SOI DriftMOS power devices is presented in this work. Experiment and numerical simulation are both used to compare DriftMOS devices integrated in 65 nm and 130 nm SOI technologies. Important RTHmiddot drop (between 40% and 60%) is found by experiment at 65 nm technology, basically due to the thinner buried oxide (BOX) layer. However, numerical simulation reveals a lower RTHmiddot reduction in the hottest point of the SOI active layer, shifted down about 15%. Furthermore, the RTHmiddot dependence with device geometrical parameters is investigated and the different layer contributions to the global thermal resistance are identified.