用于宽带光电突触器件的硅纳米晶体与二维WSe2的杂化结构

Zhenyi Ni, Yue Wang, Lixiang Liu, Shuangyi Zhao, Yang Xu, X. Pi, Deren Yang
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引用次数: 16

摘要

作为即将到来的“超越摩尔”时代最重要的技术之一,神经形态计算在很大程度上取决于突触装置的发展。本文利用掺硼硅纳米晶体(Si NCs)的强宽带光吸收和二维WSe2的高效电荷输运的协同作用,制作了基于Si NCs和二维WSe2杂化结构的突触器件。Si-NC/WSe2突触器件可以在从紫外(UV)到近红外(NIR)的广谱区域内进行光刺激,显示出重要的突触功能。Si-NC/WSe2突触器件的能量消耗可能低至~ 75 fJ。这项工作对利用丰富的半导体nc和二维材料库开发突触器件具有重要意义。
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Hybrid Structure of Silicon Nanocrystals and 2D WSe2 for Broadband Optoelectronic Synaptic Devices
As one of the most important technologies in the coming “More than Moore” era, neuromorphic computing critically depends on the development of synaptic devices. Here we take advantage of the synergy of the strong broadband optical absorption of boron (B)-doped silicon nanocrystals (Si NCs) and the efficient charge transport of two-dimensional (2D) WSe2 to make synaptic devices based on the hybrid structure of Si NCs and 2D WSe2. The Si-NC/WSe2 synaptic devices can be optically stimulated in a broad spectral region from the ultraviolet (UV) to near-infrared (NIR), exhibiting important synaptic functionalities. The energy consumption of the Si-NC/WSe2 synaptic devices may be as low as ∼ 75 fJ. This work has important implication for the development of synaptic devices by exploiting the abundant library of semiconductor NCs and 2D materials.
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