Coupled structural and functional characterization and modelling of integrated GaN half-bridge power switches

This paper presents the development of a fully-coupled electro-thermal model for a highly integrated half-brdige GaN power switch in surface mount packaging. The device under test represents a relatively complex system, characterized by 3D electrical and thermal interconnectivity and very challenging, if not impossible, comprehensive thermal characterization. Thus, the development and validation of an accurate, yet computationally efficient simulation model is a powerful tool for the design and development of high-frequency high-power-density power conversion solutions based on GaN technology.