Si/SiGe太赫兹量子级联发射器

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1271976

D. Paul, S. Lynch, P. Townsend, Z. Ikonić, R. Kelsall, P. Harrison, S. Liew, D. Norris, A. Cullis, J. Zhang, H. Gamble, W. Tribe, D. D. Arnone

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引用次数: 1

摘要

在本文中，我们证明了电致发光在应变对称结构中具有多达600个活跃周期。该晶片还首次展示了在硅化硅晶片顶部生长应变对称Si/SiGe超晶格，硅化硅被设计为波导腔中的底部反射器。TEM图像显示，该结构具有良好的平面性和均匀性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Si/SiGe terahertz quantum cascade emitters

In this paper, we demonstrated electroluminescence in strain-symmetrised structures with up to 600 active periods. The wafer also demonstrates for the first time growth of a strain symmetrised Si/SiGe superlattice on top of a silicon-on-silicide wafer where the silicide is designed to be a bottom reflector in waveguide cavity. TEM images of the structure demonstrated excellent planarity and uniformity of the active periods.

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International Semiconductor Device Research Symposium, 2003

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