选择性CVD W塞和高温溅射Al(Cu)两层金属体系的比较

Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference Pub Date : 1989-06-12 DOI:10.1109/VMIC.1989.78047

S. R. Wilson, R. J. Mattox, J. Sellers

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The via chains using W to achieve an approximately 100% via fill had excellent results. All chains were continuous and the average resistance/via was 0.33, 0.19 and 0.13 Omega for the (0.75 mu m)/sup 2/, (1.0 mu m)/sup 2/, and (1.25 mu m)/sup 2/ via chains, respectively. The standard deviation across a wafer in each case was less than 2%. When the Wfills were 75% on the smallest vias the step coverage from 325 degrees C sputtered AlCu was poor; causing some opens and an increase in the mean and standard deviation of the Omega /via. On larger vias with same percent fill, the chains were continuous, but the resistance was greater than for the 100% fills. This is an issue when the vias have different depths due to underlying topography.<<ETX>>","PeriodicalId":302853,"journal":{"name":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comparison of a two layer metal system built with selective CVD W plugs and elevated temperature, sputtered Al(Cu)\",\"authors\":\"S. R. Wilson, R. J. Mattox, J. Sellers\",\"doi\":\"10.1109/VMIC.1989.78047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Advanced ULSI circuits require minimum features <or=1.0 mu m to maximize packing density. In addition, metal line pinches must be approximately 2.0 mu m and vias <or=1.0 mu m with straight walls. Thicker interlevel dielectrics for capacitance reduction mean that the aspect ratio (height/width) of vias must be approximately 1.0. These high aspect ratios greatly reduce the step coverage of sputtered metal causing two potential problems: (1) increased via resistance and (2) sources of reliability failure. To study these issues, the authors used a double-level metal vehicle with a range of metal 1 pitch of 1.75-3.0 mu m, a metal 2 pitch range of 3.0-4.5 mu m, and a range of via sizes from (0.75 mu m)/sup 2/ to (1.5 mu m)/sup 2/. The via chains using W to achieve an approximately 100% via fill had excellent results. All chains were continuous and the average resistance/via was 0.33, 0.19 and 0.13 Omega for the (0.75 mu m)/sup 2/, (1.0 mu m)/sup 2/, and (1.25 mu m)/sup 2/ via chains, respectively. The standard deviation across a wafer in each case was less than 2%. When the Wfills were 75% on the smallest vias the step coverage from 325 degrees C sputtered AlCu was poor; causing some opens and an increase in the mean and standard deviation of the Omega /via. On larger vias with same percent fill, the chains were continuous, but the resistance was greater than for the 100% fills. This is an issue when the vias have different depths due to underlying topography.<<ETX>>\",\"PeriodicalId\":302853,\"journal\":{\"name\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VMIC.1989.78047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., Sixth International IEEE VLSI Multilevel Interconnection Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VMIC.1989.78047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}