Jonghyun Cho, Myunghoi Kim, Joohee Kim, J. Pak, Joungho Kim, Hyungdong Lee, Junho Lee, Kunwoo Park
{"title":"通过硅通孔(TSV)耗尽效应","authors":"Jonghyun Cho, Myunghoi Kim, Joohee Kim, J. Pak, Joungho Kim, Hyungdong Lee, Junho Lee, Kunwoo Park","doi":"10.1109/EPEPS.2011.6100198","DOIUrl":null,"url":null,"abstract":"The effects of through-silicon via (TSV) depletion are analyzed based on the frequency- and time-domain measurements in this paper. As TSV dc bias voltage increases, a TSV depletion region is generated; this region decreases TSV noise coupling at frequencies below 1 GHz. It also creates duty-cycle distortion of the coupled signal, which results from the nonlinearity of the TSV.","PeriodicalId":313560,"journal":{"name":"2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Through-silicon via (TSV) depletion effect\",\"authors\":\"Jonghyun Cho, Myunghoi Kim, Joohee Kim, J. Pak, Joungho Kim, Hyungdong Lee, Junho Lee, Kunwoo Park\",\"doi\":\"10.1109/EPEPS.2011.6100198\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of through-silicon via (TSV) depletion are analyzed based on the frequency- and time-domain measurements in this paper. As TSV dc bias voltage increases, a TSV depletion region is generated; this region decreases TSV noise coupling at frequencies below 1 GHz. It also creates duty-cycle distortion of the coupled signal, which results from the nonlinearity of the TSV.\",\"PeriodicalId\":313560,\"journal\":{\"name\":\"2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPEPS.2011.6100198\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE 20th Conference on Electrical Performance of Electronic Packaging and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPS.2011.6100198","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effects of through-silicon via (TSV) depletion are analyzed based on the frequency- and time-domain measurements in this paper. As TSV dc bias voltage increases, a TSV depletion region is generated; this region decreases TSV noise coupling at frequencies below 1 GHz. It also creates duty-cycle distortion of the coupled signal, which results from the nonlinearity of the TSV.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
