10nm CMOS中触发器和脉冲锁存器的最小延迟余量/误差检测与校正

P. Meinerzhagen, S. Kundu, Andres F. Malavasi, Trang Nguyen, M. Khellah, J. Tschanz, V. De
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引用次数: 0

摘要

在高电压和技术缩放下,最小延迟(MID)错误率急剧增加,限制了VMIN。脉冲锁存器比触发器提供了显著的时钟功耗节省,但进一步加剧了MID故障。本函提出用于触发器和脉冲锁存器的MID余量/误差检测和校正(M2/EDAC),以减少电压噪声,温度变化和老化的VMIN保护带,并检测和纠正罕见的MID故障。从10纳米三栅极CMOS原型收集的统计数据显示,VMIN降低高达122 mv。由M2/EDAC实现的可靠脉冲锁存器可为10nm CMOS中的逻辑模块提供12%-18%的总动态功耗节省。
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Min-Delay Margin/Error Detection and Correction for Flip-Flops and Pulsed Latches in 10-nm CMOS
Min-delay (MID) error rates increase dramatically under aggressive voltage and technology scaling, limiting VMIN. Pulsed latches offer significant clocking power savings over flip-flops but further aggravate MID failures. This letter proposes MID margin/error detection and correction (M2/EDAC) for flip-flops and pulsed latches to reduce VMIN guard bands for voltage noise, temperature variation, and aging, and to detect and correct rare MID failures. Statistical data collection from a prototype in 10-nm tri-gate CMOS shows up to 122-mV VMIN reduction. Reliable pulsed latches enabled by M2/EDAC offer 12%–18% total dynamic power savings for logic blocks in 10-nm CMOS.
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