P. Meinerzhagen, S. Kundu, Andres F. Malavasi, Trang Nguyen, M. Khellah, J. Tschanz, V. De
{"title":"10nm CMOS中触发器和脉冲锁存器的最小延迟余量/误差检测与校正","authors":"P. Meinerzhagen, S. Kundu, Andres F. Malavasi, Trang Nguyen, M. Khellah, J. Tschanz, V. De","doi":"10.1109/ESSCIRC.2019.8902924","DOIUrl":null,"url":null,"abstract":"Min-delay (MID) error rates increase dramatically under aggressive voltage and technology scaling, limiting VMIN. Pulsed latches offer significant clocking power savings over flip-flops but further aggravate MID failures. This letter proposes MID margin/error detection and correction (M2/EDAC) for flip-flops and pulsed latches to reduce VMIN guard bands for voltage noise, temperature variation, and aging, and to detect and correct rare MID failures. Statistical data collection from a prototype in 10-nm tri-gate CMOS shows up to 122-mV VMIN reduction. Reliable pulsed latches enabled by M2/EDAC offer 12%–18% total dynamic power savings for logic blocks in 10-nm CMOS.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Min-Delay Margin/Error Detection and Correction for Flip-Flops and Pulsed Latches in 10-nm CMOS\",\"authors\":\"P. Meinerzhagen, S. Kundu, Andres F. Malavasi, Trang Nguyen, M. Khellah, J. Tschanz, V. De\",\"doi\":\"10.1109/ESSCIRC.2019.8902924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Min-delay (MID) error rates increase dramatically under aggressive voltage and technology scaling, limiting VMIN. Pulsed latches offer significant clocking power savings over flip-flops but further aggravate MID failures. This letter proposes MID margin/error detection and correction (M2/EDAC) for flip-flops and pulsed latches to reduce VMIN guard bands for voltage noise, temperature variation, and aging, and to detect and correct rare MID failures. Statistical data collection from a prototype in 10-nm tri-gate CMOS shows up to 122-mV VMIN reduction. Reliable pulsed latches enabled by M2/EDAC offer 12%–18% total dynamic power savings for logic blocks in 10-nm CMOS.\",\"PeriodicalId\":402948,\"journal\":{\"name\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2019.8902924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Min-Delay Margin/Error Detection and Correction for Flip-Flops and Pulsed Latches in 10-nm CMOS
Min-delay (MID) error rates increase dramatically under aggressive voltage and technology scaling, limiting VMIN. Pulsed latches offer significant clocking power savings over flip-flops but further aggravate MID failures. This letter proposes MID margin/error detection and correction (M2/EDAC) for flip-flops and pulsed latches to reduce VMIN guard bands for voltage noise, temperature variation, and aging, and to detect and correct rare MID failures. Statistical data collection from a prototype in 10-nm tri-gate CMOS shows up to 122-mV VMIN reduction. Reliable pulsed latches enabled by M2/EDAC offer 12%–18% total dynamic power savings for logic blocks in 10-nm CMOS.