{"title":"新型微电子器件的先进性和可靠性","authors":"Wengang Gu, Wenxiao Fang","doi":"10.1109/ICRMS.2016.8050135","DOIUrl":null,"url":null,"abstract":"This paper presents the topical researches on novel microelectric devices in recent years. With the nanometerization of microelectric devices, new materials such as GaN, SiC, and new structures such as MEMS, SOI, SIP, have been adopted widely. We focus on their reliability studies, and then propose the methodology and suggestions on reliability studies of novel microelectronic devices.","PeriodicalId":347031,"journal":{"name":"2016 11th International Conference on Reliability, Maintainability and Safety (ICRMS)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2016-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The topical issues on the advancement and reliability of novel microelectronic devices\",\"authors\":\"Wengang Gu, Wenxiao Fang\",\"doi\":\"10.1109/ICRMS.2016.8050135\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents the topical researches on novel microelectric devices in recent years. With the nanometerization of microelectric devices, new materials such as GaN, SiC, and new structures such as MEMS, SOI, SIP, have been adopted widely. We focus on their reliability studies, and then propose the methodology and suggestions on reliability studies of novel microelectronic devices.\",\"PeriodicalId\":347031,\"journal\":{\"name\":\"2016 11th International Conference on Reliability, Maintainability and Safety (ICRMS)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 11th International Conference on Reliability, Maintainability and Safety (ICRMS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICRMS.2016.8050135\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 11th International Conference on Reliability, Maintainability and Safety (ICRMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICRMS.2016.8050135","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The topical issues on the advancement and reliability of novel microelectronic devices
This paper presents the topical researches on novel microelectric devices in recent years. With the nanometerization of microelectric devices, new materials such as GaN, SiC, and new structures such as MEMS, SOI, SIP, have been adopted widely. We focus on their reliability studies, and then propose the methodology and suggestions on reliability studies of novel microelectronic devices.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
