{"title":"高温应用的金属丝键合技术","authors":"J. Freytag, I. Wennemuth","doi":"10.1109/ICSICT.1998.785858","DOIUrl":null,"url":null,"abstract":"Palladium (Pd) wire is a favourable metal for wire bonding electronic devices operating an enhanced temperatures. The bonding process was investigated and the significant process parameters were identified. Different parameter sets were worked out for various bonding machines. The separation of the wire after the bonding process was found to be decisive for the quality of the bond. Thermal ageing at enhanced temperatures (i.e. 300/spl deg/C for 1000 h) causes no degradation of the bonds.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"284 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Wire bonding technique for high temperature applications\",\"authors\":\"J. Freytag, I. Wennemuth\",\"doi\":\"10.1109/ICSICT.1998.785858\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Palladium (Pd) wire is a favourable metal for wire bonding electronic devices operating an enhanced temperatures. The bonding process was investigated and the significant process parameters were identified. Different parameter sets were worked out for various bonding machines. The separation of the wire after the bonding process was found to be decisive for the quality of the bond. Thermal ageing at enhanced temperatures (i.e. 300/spl deg/C for 1000 h) causes no degradation of the bonds.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"284 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785858\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785858","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

钯(Pd)线是一种适用于在高温下工作的电子器件的金属。对键合工艺进行了研究,确定了重要的工艺参数。针对不同的粘接机设计了不同的参数集。发现焊后导线的分离对焊后质量起决定性作用。在提高温度下(即300/spl℃1000 h)的热老化不会导致键的降解。
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Wire bonding technique for high temperature applications
Palladium (Pd) wire is a favourable metal for wire bonding electronic devices operating an enhanced temperatures. The bonding process was investigated and the significant process parameters were identified. Different parameter sets were worked out for various bonding machines. The separation of the wire after the bonding process was found to be decisive for the quality of the bond. Thermal ageing at enhanced temperatures (i.e. 300/spl deg/C for 1000 h) causes no degradation of the bonds.
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