Shuhei Tokuyama, Hiroaki Kato, T. Kachi, K. Miyashita, Kenya Kobayashi
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High Performance Dual Field Plate Trench MOSFETs for Middle-voltage Applications
We propose a 200 V-class dual-field-plate (DFP) trench MOSFET (DFP MOSFET), which has multiple field-plate of different length inside the deep trench. This structure can be formed by simple DFP process. To clarify optimum design of DFP structure and reveal its potential, we verify the significant device parameters by TCAD simulation. We obtained a specific on-resistance of $147.7\ \ \mathrm{m}\Omega\cdot \text{mm}^{2}$ at a breakdown voltage of 237 V, which is the best result in comparable voltage rating MOSFETs.
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