beol兼容多金属-铁电-金属(m-MFM)场效应管设计低电压(2.5 V)，高密度，卓越的可靠性

2020 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2020-12-12 DOI:10.1109/IEDM13553.2020.9371916

Mengyao Yan, Ming-Hung Wu, Hsin-Hui Huang, Yu-Hao Chen, Y. Chu, Tian-Li Wu, P. Yeh, Chih-Yao Wang, Yu-De Lin, Jian-Wei Su, P. Tzeng, S. Sheu, W. Lo, Chih-I Wu, T. Hou

{"title":"beol兼容多金属-铁电-金属(m-MFM)场效应管设计低电压(2.5 V)，高密度，卓越的可靠性","authors":"Mengyao Yan, Ming-Hung Wu, Hsin-Hui Huang, Yu-Hao Chen, Y. Chu, Tian-Li Wu, P. Yeh, Chih-Yao Wang, Yu-De Lin, Jian-Wei Su, P. Tzeng, S. Sheu, W. Lo, Chih-I Wu, T. Hou","doi":"10.1109/IEDM13553.2020.9371916","DOIUrl":null,"url":null,"abstract":"An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"179 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"BEOL-Compatible Multiple Metal-Ferroelectric-Metal (m-MFM) FETs Designed for Low Voltage (2.5 V), High Density, and Excellent Reliability\",\"authors\":\"Mengyao Yan, Ming-Hung Wu, Hsin-Hui Huang, Yu-Hao Chen, Y. Chu, Tian-Li Wu, P. Yeh, Chih-Yao Wang, Yu-De Lin, Jian-Wei Su, P. Tzeng, S. Sheu, W. Lo, Chih-I Wu, T. Hou\",\"doi\":\"10.1109/IEDM13553.2020.9371916\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.\",\"PeriodicalId\":415186,\"journal\":{\"name\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"179 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM13553.2020.9371916\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371916","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 10

摘要

建立了一个考虑动态铁电开关和电荷注入的实验校准SPICE模型，以共同优化MFMFET的存储窗口、写入速度、持久时间和保持时间，其中标准BEOL HfZrOx MFM电容器堆叠在逻辑晶体管的顶部。这种有前途的soc兼容、低功耗和低电压嵌入式存储器在±2.5 V下编程3 μs时实现了> 104的高电流通断比，而不会影响10年的保留和mfm等效的耐用性。并提出了一种利用多个MFMs的新型m-MFMFET。m- mfmffet达到了与标准mfmffet相当的性能，但进一步减少了22%的单位电池尺寸。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

BEOL-Compatible Multiple Metal-Ferroelectric-Metal (m-MFM) FETs Designed for Low Voltage (2.5 V), High Density, and Excellent Reliability

An experiment-calibrated SPICE model considering dynamic ferroelectric switching and charge injection is established to co-optimize memory window, write speed, endurance, and retention of MFMFET where a standard BEOL HfZrOx MFM capacitor is stacked on top of the logic transistor. This promising SOC-compatible, low-power and low-voltage embedded memory achieves a high current on-off ratio > 104 when programming at ±2.5 V for 3 μs without compromising 10-year retention and MFM-equivalent endurance. A novel m-MFMFET utilizing multiple MFMs is also proposed. m-MFMFET achieves equivalent performance as the standard MFMFET but further reduces the unit cell size by 22 %.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 IEEE International Electron Devices Meeting (IEDM)

自引率

0.00%

发文量