{"title":"单片2.5kV RMS, 1.8V-3.3V双通道640Mbps数字隔离器，0.5μm SOS","authors":"Y. Moghe, A. Terry, D. Luzon","doi":"10.1109/SOI.2012.6404389","DOIUrl":null,"url":null,"abstract":"In this paper we describe a dual-channel, monolithic, capacitive digital isolator on 0.5μm SOS, with a measured single-channel maximum speed of 640Mbps at 3.3V supply -more than 2X better than all previously reported commercial and academic literature. We report 1.8V-compatible operation for the first time, achieving a top speed of 260Mbps; which exceeds the 3.3V performance of all previously reported designs. Current draw (85μA/Mbps at 3.3V) and galvanic isolation level (2.5kV RMS) are competitive with commercial offerings.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"262 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"Monolithic 2.5kV RMS, 1.8V–3.3V dual-channel 640Mbps digital isolator in 0.5μm SOS\",\"authors\":\"Y. Moghe, A. Terry, D. Luzon\",\"doi\":\"10.1109/SOI.2012.6404389\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we describe a dual-channel, monolithic, capacitive digital isolator on 0.5μm SOS, with a measured single-channel maximum speed of 640Mbps at 3.3V supply -more than 2X better than all previously reported commercial and academic literature. We report 1.8V-compatible operation for the first time, achieving a top speed of 260Mbps; which exceeds the 3.3V performance of all previously reported designs. Current draw (85μA/Mbps at 3.3V) and galvanic isolation level (2.5kV RMS) are competitive with commercial offerings.\",\"PeriodicalId\":306839,\"journal\":{\"name\":\"2012 IEEE International SOI Conference (SOI)\",\"volume\":\"262 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2012.6404389\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404389","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithic 2.5kV RMS, 1.8V–3.3V dual-channel 640Mbps digital isolator in 0.5μm SOS
In this paper we describe a dual-channel, monolithic, capacitive digital isolator on 0.5μm SOS, with a measured single-channel maximum speed of 640Mbps at 3.3V supply -more than 2X better than all previously reported commercial and academic literature. We report 1.8V-compatible operation for the first time, achieving a top speed of 260Mbps; which exceeds the 3.3V performance of all previously reported designs. Current draw (85μA/Mbps at 3.3V) and galvanic isolation level (2.5kV RMS) are competitive with commercial offerings.
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