基于锗的光控场效应晶体管的仿真

11th International Conference on Group IV Photonics (GFP) Pub Date : 2014-11-24 DOI:10.1109/GROUP4.2014.6961989

S. Rajamani, V. Sorianello, A. De Iacovo, L. Colace

{"title":"基于锗的光控场效应晶体管的仿真","authors":"S. Rajamani, V. Sorianello, A. De Iacovo, L. Colace","doi":"10.1109/GROUP4.2014.6961989","DOIUrl":null,"url":null,"abstract":"We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.","PeriodicalId":364162,"journal":{"name":"11th International Conference on Group IV Photonics (GFP)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Simulations of Ge based optically controlled field effect transistors\",\"authors\":\"S. Rajamani, V. Sorianello, A. De Iacovo, L. Colace\",\"doi\":\"10.1109/GROUP4.2014.6961989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.\",\"PeriodicalId\":364162,\"journal\":{\"name\":\"11th International Conference on Group IV Photonics (GFP)\",\"volume\":\"55 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"11th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2014.6961989\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"11th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2014.6961989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文报道了基于锗栅极MOSFET的光控场效应晶体管(OCFET)的仿真。研究了该器件在1.55 μm近红外光下的静态和动态特性，并研究了其作为数字逆变器的工作原理。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Simulations of Ge based optically controlled field effect transistors

We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

11th International Conference on Group IV Photonics (GFP)

自引率

0.00%

发文量