所选的嵌入在印刷电路板中的无源元件的电气、噪声和稳定性特性

A. Dziedzic, A. Kłossowicz, P. Winiarski, A. Stadler, W. Stęplewski
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引用次数: 1

摘要

本文系统地研究了印制电路板(pcb)内嵌电阻(薄膜或聚合物厚膜)和电容器的电学、噪声和长期稳定性参数。在较宽的温度范围内(从-180°C到130°C)测定了电阻或电容的温度依赖性,并分析了被动材料几何形状和包层工艺的函数。进行了原位加速老化过程(在老化条件下直接测量被动式的基本性能),以进行长期行为分析。利用直流电桥结构下的噪声谱测量,在室温下进行了低频噪声测量。R(T)特性与几乎恒定的负差分TCR值呈线性关系(对于100个Ω/sq的Ni-P电阻器,约为-60 ppm/K)。两组研究的电阻器在老化过程中显示出相似的相对电阻变化范围,但结果显示两组电阻随时间的变化有很大不同。这意味着老龄化的动态变化是不同的。Ni-P电阻器只观察到正的电阻变化,而聚合物电阻器的特性形状要复杂得多,在环境暴露下表现出电阻的增加和减少。发现电阻波动产生的1/f噪声是主要噪声成分,但两组电阻的噪声水平存在显著差异。温度越高,电容变化越大,C(T)特性呈非线性。暴露在高温下的电容器表现出电容和耗散系数的降低。电容的相对变化范围从-12%到-2%,耗散因子的相对变化幅度高达-60%。参数的相对漂移值与介电成分和尺寸密切相关。结果还揭示了温度域的非线性特征。
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Chosen electrical, noise and stability characteristics of passive components embedded in printed circuit boards
This paper presents systematic studies of electrical, noise and long-term stability parameters of resistors (thin-film or polymer thick-film) and capacitors embedded in Printed Circuit Boards (PCBs). The temperature dependence of resistance or capacitance were determined in a wide temperature range (from -180°C to 130°C) and analyzed as a function of geometry of passives and cladding process. The in-situ accelerated ageing process (basic properties of passives measured directly at ageing conditions) was carried out to perform long-term behavior analysis. Low frequency noise measurements were made in room temperature using noise spectra measurements in dc bridge configuration. The R(T) characteristics are linear with almost constant, negative value of differential TCR (of about -60 ppm/K for 100 Ω/sq Ni-P resistors). Both groups of investigated resistors revealed similar range of relative resistance changes after ageing processes but the results showed the quite different behavior of both groups versus time. It means that the dynamics of ageing changes was different. Only positive resistance changes were observed for Ni-P resistors, whereas the shape of characteristics for polymer ones were much more complex, exhibited increase as well as decrease in resistance under environmental exposure. 1/f noise generated by resistance fluctuations was found as the main noise component but the significant difference of noise level was observed for both groups of investigated resistors. The C(T) characteristics are nonlinear with larger capacitance changes at higher temperature. Capacitors exposed to elevated temperature exhibited capacitance and dissipation factor decrease. The relative changes were from the range from -12% to -2% for capacitance and up to -60% for dissipation factor. The value of relative drift of parameters was dependent strongly on dielectric composition and size. Moreover the results revealed nonlinear characteristics in temperature domain as well.
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