氮化镓hemt中热空穴捕获的影响

2008 IEEE International Reliability Physics Symposium Pub Date : 2008-07-09 DOI:10.1109/RELPHY.2008.4558956

Hsiang Chen, J. Lai, P. Preech, Guann-Pyng Li

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引用次数: 1

摘要

从电致发光的变化和阈值电压的变化，报道了热空穴捕获是GaN hemt的机制。研究了电致钝化对表面陷阱或表面状态的影响，证明了电致钝化对HEMT运行的实时监测是有效的。空穴捕获导致漏极到源极电流的增加，阈值电压的降低也被显示出来。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of hot hole trapping in GaN HEMTs

Hot hole trapping was mechanism was reported for GaN HEMTs from observations of electroluminescence changes and threshold voltage shifts. Passivation effect was studied through EL on the surface traps or surface states and proved to be effective in real-time monitoring of HEMT operation.Hole trapping leading to an increase in the drain to source current, and a decrease in the threshold voltage have also been shown.

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2008 IEEE International Reliability Physics Symposium

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