{"title":"用于电热电路模拟的功率半导体器件热模型","authors":"P. Igić, P. Mawby, M. Towers, S. Batcup","doi":"10.1109/MIEL.2002.1003167","DOIUrl":null,"url":null,"abstract":"An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.","PeriodicalId":221518,"journal":{"name":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Thermal model of power semiconductor devices for electro-thermal circuit simulations\",\"authors\":\"P. Igić, P. Mawby, M. Towers, S. Batcup\",\"doi\":\"10.1109/MIEL.2002.1003167\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.\",\"PeriodicalId\":221518,\"journal\":{\"name\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIEL.2002.1003167\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2002 23rd International Conference on Microelectronics. Proceedings (Cat. No.02TH8595)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2002.1003167","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal model of power semiconductor devices for electro-thermal circuit simulations
An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.
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