优化的CMOS-SOI工艺用于高性能射频开关

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404385

A. Joshi, S. Lee, Y. Y. Chen, T. Y. Lee

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引用次数: 17

摘要

近年来，基于绝缘体上硅的CMOS技术已迅速发展成为无线开关的主流技术。由于此类应用可能涉及在高频(~2 GHz)下切换高功率电平(35 dBm)，因此技术考虑与用于高速，小信号应用(如微处理器)的SOI有很大不同。本文概述了关键技术的挑战和权衡。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimized CMOS-SOI process for high performance RF switches

In recent years, CMOS on Silicon-on-Insulator has rapidly evolved as a mainstream technology for switches used in wireless applications. Since such applications can involve switching high power levels (35 dBm) at high frequencies (~2 GHz), the technology considerations are substantially different than those for SOI used in high speed, small signal applications such as microprocessors. This paper provides an overview of key technology challenges and trade-offs.

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2012 IEEE International SOI Conference (SOI)

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