Nanoscale silicon mosfet response to THz radiation for testing VLSI

The increasing complexity of silicon VLSI circuits makes their comprehensive testing, determination of counterfeit parts, and predictions of reliability a growing challenge. We analyze the response of Si MOSFETs to sub-THz and THz radiation for different feature sizes and temperatures. Our results show that such testing could be expanded to develop unique response signatures for contact and channel regions for feature sizes exceeding 20 nm. They also indicate a possibility of the resonant MOSFET response to the THz radiation at cryogenic temperatures.