氮、氩气氛下4H碳化硅AlN退火帽的比较

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1272026

M. Derenge, K. Jones, K. Kirchner, M. Ervin

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引用次数: 4

摘要

本文在氮气和氩气气氛下对4H碳化硅的AlN薄膜进行了退火处理，并对样品进行了扫描电镜和原子力显微镜成像，考察了AlN薄膜的表面形貌。并对实验结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A comparison of the AlN annealing cap for 4H SiC annealed in a nitrogen versus an argon atmosphere

In this paper, AlN films annealing cap for 4H SiC in a nitrogen and argon atmosphere and also the samples are imaged by SEM and AFM to examine the surface morphology of the AlN film. The results obtained from this experiments are compared.

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International Semiconductor Device Research Symposium, 2003

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