亚带隙光照射下硅基上Al2O3/AlGaN/GaN MOSHEMTs的电流崩塌降低

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1109/CSW55288.2022.9930448

Kailing Pan, Huaxing Jiang, W. Tang, K. Lau

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引用次数: 0

摘要

本文报道了用亚带隙光照射抑制硅基上Al2O3/AlGaN/GaN MOSHEMTs的电流崩溃。405 nm光照射下的栅极脉冲IDS-VGS和双脉冲IDS-VDS特性表明，子带隙光照射可以有效地减轻栅极堆叠中的电子捕获效应，从而减少电流崩溃，尽管可能会增加失态泄漏电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Current Collapse Reduction in Al2O3/AlGaN/GaN MOSHEMTs on Si with Sub-bandgap Light Illumination

This paper reports the suppression of current collapse in Al2O3/AlGaN/GaN MOSHEMTs on Si with sub-bandgap light illumination. Both the gate pulsed IDS-VGS and double pulsed IDS-VDS characteristics under 405-nm light illumination reveal that the sub-bandgap light illumination can effectively mitigate the electron trapping effect in the gate stack, thereby reducing the current collapse, despite a potential cost of increased off-state leakage current.

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2022 Compound Semiconductor Week (CSW)

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