Ge谱线对SiGe HBT基传递时间和基电阻的影响

Proceedings of Third International Conference on Electronics, Circuits, and Systems Pub Date : 1996-10-13 DOI:10.1109/ICECS.1996.584522

J. Song, J. Yuan, F. Schwierz, D. Schipanski

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引用次数: 0

摘要

评价了锗线形状对SiGe双极晶体管基底的影响。推导了考虑非均匀基极掺杂和锗带隙分级的内场作用下基极传输时间和基极电阻的解析方程。比较了不同锗型材的基底传输时间和基底片电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Effects of Ge profiles on base transit time and base resistance of SiGe HBT's

Effects of the shape of Ge profiles in the base of the SiGe bipolar transistor have been evaluated. Analytical equations of base transit time and base resistance taking into account built-in field from nonuniform base doping and Ge bandgap grading are derived. Comparisons of base transit time and base sheet resistance for different Ge profiles are presented.

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Proceedings of Third International Conference on Electronics, Circuits, and Systems

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