宽带隙器件的近结热管理

A. Bar-Cohen, J. Albrecht, J. Maurer
{"title":"宽带隙器件的近结热管理","authors":"A. Bar-Cohen, J. Albrecht, J. Maurer","doi":"10.1109/CSICS.2011.6062454","DOIUrl":null,"url":null,"abstract":"Near-junction thermal management is critical to achieving the promise of electronic and photonic devices using wide bandgap materials. In such devices, including GaN HEMTs in PAs, the thermal resistance associated with the \"near-junction\" region dominates the heat removal path and is often as large as the thermal resistance of all the other elements in the resistance chain. As part of DARPA's portfolio in Thermal Management Technologies (TMT), efforts are underway to develop transformative, paradigm-changing cooling techniques. This paper will briefly review the thermal management needs of WBG devices and DARPA's Thermal Management Technologies portfolio, with emphasis on the goals and status of these efforts relative to the current State-of-the-Art. Attention will then turn to promising options in near-junction cooling and the challenges inherent in realizing their potential for WBG device thermal management.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"154 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"50","resultStr":"{\"title\":\"Near-Junction Thermal Management for Wide Bandgap Devices\",\"authors\":\"A. Bar-Cohen, J. Albrecht, J. Maurer\",\"doi\":\"10.1109/CSICS.2011.6062454\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Near-junction thermal management is critical to achieving the promise of electronic and photonic devices using wide bandgap materials. In such devices, including GaN HEMTs in PAs, the thermal resistance associated with the \\\"near-junction\\\" region dominates the heat removal path and is often as large as the thermal resistance of all the other elements in the resistance chain. As part of DARPA's portfolio in Thermal Management Technologies (TMT), efforts are underway to develop transformative, paradigm-changing cooling techniques. This paper will briefly review the thermal management needs of WBG devices and DARPA's Thermal Management Technologies portfolio, with emphasis on the goals and status of these efforts relative to the current State-of-the-Art. Attention will then turn to promising options in near-junction cooling and the challenges inherent in realizing their potential for WBG device thermal management.\",\"PeriodicalId\":275064,\"journal\":{\"name\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"154 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"50\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2011.6062454\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062454","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 50

摘要

近结热管理对于实现使用宽带隙材料的电子和光子器件的承诺至关重要。在这样的器件中,包括PAs中的GaN hemt,与“近结”区域相关的热阻在散热路径中占主导地位,并且通常与电阻链中所有其他元件的热阻一样大。作为DARPA热管理技术(TMT)投资组合的一部分,正在努力开发变革性的、改变范式的冷却技术。本文将简要回顾WBG设备的热管理需求和DARPA的热管理技术组合,重点介绍这些工作的目标和现状。然后将注意力转向近结冷却的有前途的选择,以及实现其WBG器件热管理潜力所固有的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Near-Junction Thermal Management for Wide Bandgap Devices
Near-junction thermal management is critical to achieving the promise of electronic and photonic devices using wide bandgap materials. In such devices, including GaN HEMTs in PAs, the thermal resistance associated with the "near-junction" region dominates the heat removal path and is often as large as the thermal resistance of all the other elements in the resistance chain. As part of DARPA's portfolio in Thermal Management Technologies (TMT), efforts are underway to develop transformative, paradigm-changing cooling techniques. This paper will briefly review the thermal management needs of WBG devices and DARPA's Thermal Management Technologies portfolio, with emphasis on the goals and status of these efforts relative to the current State-of-the-Art. Attention will then turn to promising options in near-junction cooling and the challenges inherent in realizing their potential for WBG device thermal management.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Q-Band Amplifier Implemented with Stacked 45-nm CMOS FETs Degradation of AlGaN/GaN High Electron Mobility Transistors from X-Band Operation Applications of SOI Technologies to Communication A 42 GHz Amplifier Designed Using Common-Gate Load Pull A 75 mW 210 GHz Power Amplifier Module
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1