一种带键垫大小的数字CMOS窄带LNA

J. Borremans, P. Wambacq, G. van der Plas, Y. Rolain, M. Kuijk
{"title":"一种带键垫大小的数字CMOS窄带LNA","authors":"J. Borremans, P. Wambacq, G. van der Plas, Y. Rolain, M. Kuijk","doi":"10.1109/RFIC.2007.380973","DOIUrl":null,"url":null,"abstract":"The need for a high level of integration in wireless and multi-standard radios, as well as the expensive area in downscaled CMOS pushes towards low-area circuit solutions. Feedback-type inductorless LNAs are such an example. This paper demonstrates a bondpad-size feedback type narrowband LNA using only one stacked inductor. The gain is 20.8 dB at 3.4 GHz with a noise figure of 2.2 dB. This solution is many times smaller than a classical LNA configuration with several inductors, while obtaining similar performance. It is thus an appealing solution for low-area radio integration in digital CMOS.","PeriodicalId":356468,"journal":{"name":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","volume":"212 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A Bondpad-Size Narrowband LNA for Digital CMOS\",\"authors\":\"J. Borremans, P. Wambacq, G. van der Plas, Y. Rolain, M. Kuijk\",\"doi\":\"10.1109/RFIC.2007.380973\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The need for a high level of integration in wireless and multi-standard radios, as well as the expensive area in downscaled CMOS pushes towards low-area circuit solutions. Feedback-type inductorless LNAs are such an example. This paper demonstrates a bondpad-size feedback type narrowband LNA using only one stacked inductor. The gain is 20.8 dB at 3.4 GHz with a noise figure of 2.2 dB. This solution is many times smaller than a classical LNA configuration with several inductors, while obtaining similar performance. It is thus an appealing solution for low-area radio integration in digital CMOS.\",\"PeriodicalId\":356468,\"journal\":{\"name\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"volume\":\"212 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2007.380973\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2007.380973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10

摘要

无线和多标准无线电对高集成度的需求,以及缩小CMOS的昂贵面积,推动了低面积电路解决方案的发展。反馈型无电感lna就是这样一个例子。本文演示了一个仅使用一个堆叠电感的键垫大小的反馈型窄带LNA。3.4 GHz时的增益为20.8 dB,噪声系数为2.2 dB。该解决方案比具有多个电感的经典LNA配置小许多倍,同时获得相似的性能。因此,它是数字CMOS中低区域无线电集成的一个有吸引力的解决方案。
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A Bondpad-Size Narrowband LNA for Digital CMOS
The need for a high level of integration in wireless and multi-standard radios, as well as the expensive area in downscaled CMOS pushes towards low-area circuit solutions. Feedback-type inductorless LNAs are such an example. This paper demonstrates a bondpad-size feedback type narrowband LNA using only one stacked inductor. The gain is 20.8 dB at 3.4 GHz with a noise figure of 2.2 dB. This solution is many times smaller than a classical LNA configuration with several inductors, while obtaining similar performance. It is thus an appealing solution for low-area radio integration in digital CMOS.
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