BiCMOS和双极电路的可扩展双极模型

Proceedings of Third International Conference on Electronics, Circuits, and Systems Pub Date : 1996-10-13 DOI:10.1109/ICECS.1996.584520

Y. Dai, J. Yuan, A. Phanse, C. Yeh, K. Kwang

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引用次数: 1

摘要

推导了一种包含准饱和效应的类Gummel-Poon双极晶体管模型。该模型包括侧壁注入、发射极电流拥挤和集电极电流扩散等多维效应。提出了一种电流依赖的脱壳层集电极电阻来模拟准饱和条件下集电极电导率调制。该模型与测量结果进行了比较，并在双极和BiCMOS电路中实现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Scalable bipolar model for BiCMOS and bipolar circuits

A Gummel-Poon like bipolar transistor model including effects of quasi-saturation is derived. The model includes multi-dimensional effects such as sidewall injection, emitter current crowding, and collector current spreading. A current-dependent epilayer collector resistance is proposed to model collector conductivity modulation in quasi-saturation. The model has been compared with measurement and implemented in bipolar and BiCMOS circuits.

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Proceedings of Third International Conference on Electronics, Circuits, and Systems

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