S. Cristoloveanu, M. Bawedin, J. Wan, S. Chang, C. Navarro, A. Zaslavsky, C. Le Royer, F. Andrieu, N. Rodriguez, F. Gámiz
{"title":"创新的无电容SOI dram","authors":"S. Cristoloveanu, M. Bawedin, J. Wan, S. Chang, C. Navarro, A. Zaslavsky, C. Le Royer, F. Andrieu, N. Rodriguez, F. Gámiz","doi":"10.1109/SOI.2012.6404391","DOIUrl":null,"url":null,"abstract":"While the scaling of MOS transistors is still ongoing, the miniaturization of the DRAM storage capacitor is reaching a critical limit. A promising solution consists of eliminating the capacitor. Instead, the charges can be stored in the floating body of an SOI MOSFET, which is also used to read out the memory states. The floating-body 1T-DRAM takes advantage of floating-body and coupling effects that are usually regarded as parasitic phenomena.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Innovative capacitorless SOI DRAMs\",\"authors\":\"S. Cristoloveanu, M. Bawedin, J. Wan, S. Chang, C. Navarro, A. Zaslavsky, C. Le Royer, F. Andrieu, N. Rodriguez, F. Gámiz\",\"doi\":\"10.1109/SOI.2012.6404391\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"While the scaling of MOS transistors is still ongoing, the miniaturization of the DRAM storage capacitor is reaching a critical limit. A promising solution consists of eliminating the capacitor. Instead, the charges can be stored in the floating body of an SOI MOSFET, which is also used to read out the memory states. The floating-body 1T-DRAM takes advantage of floating-body and coupling effects that are usually regarded as parasitic phenomena.\",\"PeriodicalId\":306839,\"journal\":{\"name\":\"2012 IEEE International SOI Conference (SOI)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2012.6404391\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404391","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
While the scaling of MOS transistors is still ongoing, the miniaturization of the DRAM storage capacitor is reaching a critical limit. A promising solution consists of eliminating the capacitor. Instead, the charges can be stored in the floating body of an SOI MOSFET, which is also used to read out the memory states. The floating-body 1T-DRAM takes advantage of floating-body and coupling effects that are usually regarded as parasitic phenomena.
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