Frank K. H. Kao, A. Verhulst, W. Vandenberghe, G. Groeseneken, K. De Meyer
{"title":"结角对隧道场效应管的影响","authors":"Frank K. H. Kao, A. Verhulst, W. Vandenberghe, G. Groeseneken, K. De Meyer","doi":"10.1109/ULIS.2011.5757957","DOIUrl":null,"url":null,"abstract":"We derive an analytical model based on circular tunnel paths along the electric field to describe the behavior of a tunnel FET with a junction angle at the source. The model is compared with simulation results and qualitative agreement is observed. We further demonstrate that a small junction angle prevents TFET performance degradation resulting from a high-k spacer. Finally we optimize the junction angle with an encroaching source structure, studying the dependence on oxide thickness and semiconductor material.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"234 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The impact of junction angle on tunnel FETs\",\"authors\":\"Frank K. H. Kao, A. Verhulst, W. Vandenberghe, G. Groeseneken, K. De Meyer\",\"doi\":\"10.1109/ULIS.2011.5757957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We derive an analytical model based on circular tunnel paths along the electric field to describe the behavior of a tunnel FET with a junction angle at the source. The model is compared with simulation results and qualitative agreement is observed. We further demonstrate that a small junction angle prevents TFET performance degradation resulting from a high-k spacer. Finally we optimize the junction angle with an encroaching source structure, studying the dependence on oxide thickness and semiconductor material.\",\"PeriodicalId\":146779,\"journal\":{\"name\":\"Ulis 2011 Ultimate Integration on Silicon\",\"volume\":\"234 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ulis 2011 Ultimate Integration on Silicon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2011.5757957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ulis 2011 Ultimate Integration on Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2011.5757957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We derive an analytical model based on circular tunnel paths along the electric field to describe the behavior of a tunnel FET with a junction angle at the source. The model is compared with simulation results and qualitative agreement is observed. We further demonstrate that a small junction angle prevents TFET performance degradation resulting from a high-k spacer. Finally we optimize the junction angle with an encroaching source structure, studying the dependence on oxide thickness and semiconductor material.
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