{"title":"压力控制的两步TEOS-O/sub - 3/ CVD消除了基材效应","authors":"M. Saito, Y. Kudoh, Y. Homma","doi":"10.1109/VLSIT.1995.520851","DOIUrl":null,"url":null,"abstract":"A new pressure-controlled two-step TEOS-O/sub 3/ CVD has been developed to provide high quality SiO/sub 2/ films with flow-like step-coverage regardless of the underlying materials. Thin films, initially deposited under a low pressure but high O/sub 3/ concentration prior to the deposition of main films under sub/atmospheric pressure (AP), have as high quality as AP-TEOS-O/sub 3/ films, and eliminate the base material effect. Gap-filling for 0.2-/spl mu/m spaces with a high aspect ratio of 3.1 has been achieved.","PeriodicalId":328379,"journal":{"name":"1995 Symposium on VLSI Technology. Digest of Technical Papers","volume":"352 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Pressure-controlled two-step TEOS-O/sub 3/ CVD eliminating the base material effect\",\"authors\":\"M. Saito, Y. Kudoh, Y. Homma\",\"doi\":\"10.1109/VLSIT.1995.520851\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new pressure-controlled two-step TEOS-O/sub 3/ CVD has been developed to provide high quality SiO/sub 2/ films with flow-like step-coverage regardless of the underlying materials. Thin films, initially deposited under a low pressure but high O/sub 3/ concentration prior to the deposition of main films under sub/atmospheric pressure (AP), have as high quality as AP-TEOS-O/sub 3/ films, and eliminate the base material effect. Gap-filling for 0.2-/spl mu/m spaces with a high aspect ratio of 3.1 has been achieved.\",\"PeriodicalId\":328379,\"journal\":{\"name\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"volume\":\"352 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 Symposium on VLSI Technology. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1995.520851\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 Symposium on VLSI Technology. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1995.520851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Pressure-controlled two-step TEOS-O/sub 3/ CVD eliminating the base material effect
A new pressure-controlled two-step TEOS-O/sub 3/ CVD has been developed to provide high quality SiO/sub 2/ films with flow-like step-coverage regardless of the underlying materials. Thin films, initially deposited under a low pressure but high O/sub 3/ concentration prior to the deposition of main films under sub/atmospheric pressure (AP), have as high quality as AP-TEOS-O/sub 3/ films, and eliminate the base material effect. Gap-filling for 0.2-/spl mu/m spaces with a high aspect ratio of 3.1 has been achieved.
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