{"title":"扩散螺旋结终端结构:建模与实现","authors":"D. Križaj, S. Amon, G. Charitat","doi":"10.1109/ISPSD.1996.509492","DOIUrl":null,"url":null,"abstract":"An innovative junction termination structure for efficient improvement of planar pn junction breakdown properties is studied. It is composed of a high-resistivity layer, connected to the anode junction and winding around it in a spiral fashion. Leakage current through the diffused resistor results in the spread of potential along the spiral resistor and reduction of high electric field at the junction curvature region. An optimized design with decaying spiral width and increasing spacing between the spiral turns leads to close to ideal breakdown voltages as confirmed by device modeling as well as experimental results.","PeriodicalId":377997,"journal":{"name":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","volume":"531 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Diffused spiral junction termination structure: modeling and realization\",\"authors\":\"D. Križaj, S. Amon, G. Charitat\",\"doi\":\"10.1109/ISPSD.1996.509492\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An innovative junction termination structure for efficient improvement of planar pn junction breakdown properties is studied. It is composed of a high-resistivity layer, connected to the anode junction and winding around it in a spiral fashion. Leakage current through the diffused resistor results in the spread of potential along the spiral resistor and reduction of high electric field at the junction curvature region. An optimized design with decaying spiral width and increasing spacing between the spiral turns leads to close to ideal breakdown voltages as confirmed by device modeling as well as experimental results.\",\"PeriodicalId\":377997,\"journal\":{\"name\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"volume\":\"531 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1996.509492\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1996.509492","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Diffused spiral junction termination structure: modeling and realization
An innovative junction termination structure for efficient improvement of planar pn junction breakdown properties is studied. It is composed of a high-resistivity layer, connected to the anode junction and winding around it in a spiral fashion. Leakage current through the diffused resistor results in the spread of potential along the spiral resistor and reduction of high electric field at the junction curvature region. An optimized design with decaying spiral width and increasing spacing between the spiral turns leads to close to ideal breakdown voltages as confirmed by device modeling as well as experimental results.
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