空间里有什么——扇形圆片级封装细间距再分布层线/空间缺陷检测的探索与改进

M. Liebens, J. Slabbekoorn, A. Miller, E. Beyne, R. Yeoh, T. Krah, A. Vangal, S. Hiebert, A. Cross
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引用次数: 0

摘要

先进的晶圆级封装正在进入高容量的移动和消费电子市场。新封装和集成方案的驱动因素是低成本工艺和高互连数量。高性能封装的不同功能部分采用高密度互连设计,需要多个细间距再分布层(RDL)将紧密间距互连路由并扇形分布到封装级。目前,高密度扇出封装正朝着1 μ m线/空间甚至更大的方向发展。减少RDL线和空间宽度为用于生产RDL的不同工艺步骤带来了挑战,因此需要精确和精确的在线过程控制。本文阐述了细间距RDL加工对缺陷和计量的基本要求。缺陷检查和测量是在含有细间距RDL的晶圆上进行的。根据电产率结果与检测测量数据之间的相关性,提出并验证了最小RDL线/空间尺寸的改进方案,以满足细间距RDL的缺陷和计量要求。
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What’s in Space – Exploration and Improvement of Line/Space Defect Inspection of Fine-Pitch Redistribution Layer for Fan-Out Wafer Level Packaging
Advanced wafer level packaging is moving into high volume mobile and consumer electronics markets. Drivers for new packaging and integration schemes are lower-cost processes and the high count of interconnects. The different functional parts of a high-performance package are designed with high-density interconnects requiring multiple fine-pitch redistribution layers (RDL) to route and fan-out the tight pitch interconnects to the package level. Currently, high-density fan-out packages are evolving toward 1µm line/space and even beyond. Reducing RDL line and space widths creates challenges for the different process steps that are used to produce RDL, therefore the need for accurate and precise inline process control. This paper will elaborate on the fundamental requirements for defectivity and metrology of fine- pitch RDL processing. Defect inspection and measurements are performed on wafers containing fine-pitch RDL. Based on the correlation between electrical yield results and inspection and measurement data, improvements for the smallest RDL line/space sizes are proposed and validated to meet the requirements for defectivity and metrology of fine-pitch RDL.
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