WNx作为AlGaN/GaN hemt扩散屏障的厚铜金属化研究

2019 14th European Microwave Integrated Circuits Conference (EuMIC) Pub Date : 2019-09-01 DOI:10.23919/EuMIC.2019.8909414

Y. Lin, M. Lee, M. Tsai, C. Wang, J. Yao, T. J. Huang, H. Hsu, J. Maa, E. Chang

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引用次数: 1

摘要

在本研究中，研究了以WNx为扩散屏障的厚铜金属化对AlGaN/GaN hemt的影响。对有无厚铜互连金属的器件进行了电流密度、跨导、ft、fmax、噪声图的评价，并对器件进行了铜金属化后的热稳定性测试。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs

In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise Figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.

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2019 14th European Microwave Integrated Circuits Conference (EuMIC)

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