{"title":"不同机制对SiC肖特基势垒二极管特性的影响","authors":"Yimen Zhang, Yuming Zhang, YueHu Wang, R. Liang","doi":"10.1109/IWJT.2004.1306786","DOIUrl":null,"url":null,"abstract":"A number of experiments demonstrate that the Schottky barrier height for Metal-SiC is different from the prediction of theory. Based on non-uniform barrier height assumption for metal-SiC contact, a numerical simulation with 2D simulator MEDICI is performed in this paper. The simulation results show that present model matches the experimental data very well. Patch defects make the Schottky barrier height decreased. This may give a reasonable explanation for the nonideal behaviors observed from many experiments. The effect of interface state density on Schottky barrier height is also discussed.","PeriodicalId":342825,"journal":{"name":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","volume":"112 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The effect of different mechanism on the characteristics of SiC Schottky barrier diode\",\"authors\":\"Yimen Zhang, Yuming Zhang, YueHu Wang, R. Liang\",\"doi\":\"10.1109/IWJT.2004.1306786\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A number of experiments demonstrate that the Schottky barrier height for Metal-SiC is different from the prediction of theory. Based on non-uniform barrier height assumption for metal-SiC contact, a numerical simulation with 2D simulator MEDICI is performed in this paper. The simulation results show that present model matches the experimental data very well. Patch defects make the Schottky barrier height decreased. This may give a reasonable explanation for the nonideal behaviors observed from many experiments. The effect of interface state density on Schottky barrier height is also discussed.\",\"PeriodicalId\":342825,\"journal\":{\"name\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"volume\":\"112 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWJT.2004.1306786\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Fourth International Workshop on Junction Technology, 2004. IWJT '04.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWJT.2004.1306786","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The effect of different mechanism on the characteristics of SiC Schottky barrier diode
A number of experiments demonstrate that the Schottky barrier height for Metal-SiC is different from the prediction of theory. Based on non-uniform barrier height assumption for metal-SiC contact, a numerical simulation with 2D simulator MEDICI is performed in this paper. The simulation results show that present model matches the experimental data very well. Patch defects make the Schottky barrier height decreased. This may give a reasonable explanation for the nonideal behaviors observed from many experiments. The effect of interface state density on Schottky barrier height is also discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
