以ZrO2/Al2O3层压薄膜作为栅绝缘体的n-GaN MIS二极管的界面特性

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Pub Date : 2014-06-19 DOI:10.1109/IMFEDK.2014.6867063

S. Kodama, H. Tokuda, M. Kuzuhara

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摘要

研究了氮化氮化镓MIS二极管的界面特性。采用不同沉积顺序的ZrO2/Al2O3层合膜作为栅极绝缘子。结果表明，界面态密度随Al2O3含量的增加而降低，界面态能级随退火温度的升高而变浅。

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Interface properties of n-GaN MIS diodes with ZrO2/Al2O3 laminated films as a gate insulator

Interface properties have been investigated for n-GaN MIS diodes. ZrO₂/Al₂O₃ laminated films were used as a gate insulator with varying the deposition sequence of each layer. It was found that the interface state density was decreased with increasing the fraction of Al₂O₃, and the energy level of the interface state became shallow with increasing the annealing temperature.

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2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

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