缺陷光致发光成像(DPLI)在集成电路加工中的应用综述

2019 19th International Workshop on Junction Technology (IWJT) Pub Date : 2019-06-06 DOI:10.23919/IWJT.2019.8802893

L. Jastrzebski, R. Duru, D. Le-Cunff, M. Cannac, S. Joblot, I. Mica, M. Polignano, A. Galbiati, P. Monge, Roffarello, G. Nadudvari, Z. Kiss, I. Lajtos, A. Pongrácz, G. Molnár, M. Nagy, L. Dudás, P. Basa, B. Greenwood, J. Gambino

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引用次数: 2

摘要

由于Si是一种间接带隙材料，声子辅助带对带(B2B)辐射复合(能量等于Si的能隙)产生的PL非常弱;大约比激发光子通量低10个数量级[1]。如果存在晶体缺陷，则在室温下产生一个额外的宽缺陷PL峰(DPL)，其能量小于Si的带隙[1]，[2]，[3]。在室温下，缺陷带的PL强度比B2B强度低几个数量级[1]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Review of applications of Defect Photoluminescence Imaging (DPLI) during IC processing

As Si is an indirect band gap material, the PL generated by phonon assisted band-to-band (B2B) radiative recombination (of energy equal to energy gap of Si) is very weak; about 10 orders of magnitude lower than the exciting photon flux [1] . If crystallographic defects are present then at room temperature an additional broad defect PL peak is generated (DPL) with energy smaller than the band gap of Si [1] , [2] , [3] . At room temperature, defect-band PL intensity is orders of magnitude lower than the B2B intensity [1] .

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2019 19th International Workshop on Junction Technology (IWJT)

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